Nano Science and Technology Institute
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Impact of Gate Induced Drain Leakage and Impact Ionization Currents on Hysteresis Modeling of PD SOI Circuits

Authors:Q. Chen, S. Suryagandh, J-S Goo, J.X. An, C. Thuruthiyil and A.B. Icel
Affilation:Advanced Micro Devices, US
Pages:570 - 573
Keywords:body current, compact modeling, GIDL, hysteresis, impact ionization, PD SOI
Abstract:The impact of the gate induced drain leakage and impact ionization currents on hysteresis of PD FB SOI circuits is examined, and a physical understanding is provided. Measured silicon data from 90nm and 65nm PD SOI technologies indicate that both components dominate in the body currents at zero gate voltage and non-zero drain voltage. Body currents under these particular conditions are critical to pre-first-switch body voltage establishment, which is definitively validated by a compact modeling experiment. As the OFF-state channel leakage current increases in scaled technologies, these body currents need to be closely monitored and well modeled to properly predict and understand evolution of the hysteresis behavior.
Impact of Gate Induced Drain Leakage and Impact Ionization Currents on Hysteresis Modeling of PD SOI CircuitsView PDF of paper
ISBN:1-4200-6184-4
Pages:732
Hardcopy:$139.95
 
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