Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types

Authors: J-E Park, C-H Liang, J. Assenmacher, J. Watts, S-J Park and R. Wachnik

Affilation: IBM, United States

Pages: 562 - 565

Keywords: MOSFET, compact models, correlation

Abstract:
MOSFET device of similar design but different threshold voltage are often built on a single chip. It is important to be able to simulate with a compact model the variation of such devices including the correlation between them. This paper describes a method of simultating the variation included the geometric dependence of the correlations arising from common halo and separate Vt implants in the devices.


ISBN: 1-4200-6184-4
Pages: 732
Hardcopy: $139.95

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