Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types

	Nanotech 2007 Vol. 3 Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 7: Compact Modeling
	Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types
Authors:	J-E Park, C-H Liang, J. Assenmacher, J. Watts, S-J Park and R. Wachnik
Affilation:	IBM, US
Pages:	562 - 565
Keywords:	MOSFET, compact models, correlation
Abstract:	MOSFET device of similar design but different threshold voltage are often built on a single chip. It is important to be able to simulate with a compact model the variation of such devices including the correlation between them. This paper describes a method of simultating the variation included the geometric dependence of the correlations arising from common halo and separate Vt implants in the devices.
ISBN:	1-4200-6184-4
Pages:	732
Hardcopy:	$139.95

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