Nano Science and Technology Institute
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types

Authors:J-E Park, C-H Liang, J. Assenmacher, J. Watts, S-J Park and R. Wachnik
Affilation:IBM, US
Pages:562 - 565
Keywords:MOSFET, compact models, correlation
Abstract:MOSFET device of similar design but different threshold voltage are often built on a single chip. It is important to be able to simulate with a compact model the variation of such devices including the correlation between them. This paper describes a method of simultating the variation included the geometric dependence of the correlations arising from common halo and separate Vt implants in the devices.
Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET TypesView PDF of paper
ISBN:1-4200-6184-4
Pages:732
Hardcopy:$139.95
 
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