Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types

Authors: J-E Park, C-H Liang, J. Assenmacher, J. Watts, S-J Park and R. Wachnik

Affilation: IBM, United States

Pages: 562 - 565

Keywords: MOSFET, compact models, correlation

Abstract:
MOSFET device of similar design but different threshold voltage are often built on a single chip. It is important to be able to simulate with a compact model the variation of such devices including the correlation between them. This paper describes a method of simultating the variation included the geometric dependence of the correlations arising from common halo and separate Vt implants in the devices.

Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types

ISBN: 1-4200-6184-4
Pages: 732
Hardcopy: $139.95