Authors: G.D.J. Smit, A.J. Scholten, N. Serra, R.M.T. Pijper, R. van Langevelde, A. Mercha, G. Gildenblat and D.B.M. Klaassen
Affilation: NXP Semiconductors, Netherlands
Pages: 520 - 525
Keywords: compact model, FinFET, PSP
A high-quality compact FinFET model is a prerequisite for initial circuit design and evaluation of these prospective replacements for conventional bulk MOSFETs. Our PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly doped body, is very suitable for such simulations as it offers an accurate description of not only the currents, but also of the (trans-)conductance and capacitances. Moreover, this surface potential based model is continuous over all operating conditions (subthreshold, linear, saturation). The model is fully scalable and will be demonstrated to describe a full range of device geometries, from the long-channel limit down to the shortest channels, with a single set of parameters.