Nano Science and Technology Institute
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

3-D Analytical Models for the Short-Channel Effect Parameters in Undoped FinFET Devices

Authors:H.A. Hamid, B. Iniguez and J. Roig
Affilation:Universitat Rovira i Virgili, ES
Pages:515 - 519
Keywords:3D Poisson’s equation, undoped FinFET, conduction path, threshold voltage, roll-off, subthreshold swing
Abstract:We present 3-D analytical models for subthreshold swing, threshold voltage and threshold volatge roll-off of undoped FinFET devices. After solving the 3-D Poisson equation, in which the mobile charge term was included, we have obtained an expression of the electrostatic potential through the device. We have validated the threshold voltage, subthreshold swing, and threshold voltage roll-off models by comparison with 3-D numerical simulations and measured values; a good agreement with both 3-D numerical simulation and the experimental results has been observed.
3-D Analytical Models for the Short-Channel Effect Parameters in Undoped FinFET DevicesView PDF of paper
ISBN:1-4200-6184-4
Pages:732
Hardcopy:$139.95
 
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