Authors: C. Hu, M. Dunga, C-H. Lin, D. Lu, A. Niknejad
Affilation: University of California, Berkeley, United States
Pages: 512 - 514
Keywords: compact model, BSIM, FinFET, double gate, trigate
BSIM-MG is a surface-potential based compact model for multi-gate MOSFETs such as FinFETs fabricated on either SOI or bulk substrates. It can model transistors with the gate controlling two, three, or four sides of the fin. The effects of body doping are modeled. It can also model a double-gate transistor with independently biased top and bottom gates and asymmetric top and bottom gate work- functions and dielectric thicknesses. It supports high performance metal-gate technologies as well low-cost polysilicon-gate memory technologies.