Authors: J.G. Fossum and S. Chouksey
Affilation: University of Florida, United States
Pages: 510 - 511
Keywords: FinFET, velocity overshoot, drain-induced charge enhancement
Saturation-region effects, unique to double-gate (DG) MOSFETs, are discussed and modeled in UFDG. The effects include carrier velocity overshoot and drain-induced charge enhancement (DICE). The former, modeled in terms of carrier temperature, implies ballistic-like currents in nanoscale DG FinFETs. The latter, modeled in two dimensions with bulk inversion, increases drive current and, most significantly, gate capacitance, in nanoscale DG MOSFETs.