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 | Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling |
| | Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs | | Authors: | J.G. Fossum and S. Chouksey | | Affilation: | University of Florida, US | | Pages: | 510 - 511 | | Keywords: | FinFET, velocity overshoot, drain-induced charge enhancement | | Abstract: | Saturation-region effects, unique to double-gate (DG) MOSFETs, are discussed and modeled in UFDG. The effects include carrier velocity overshoot and drain-induced charge enhancement (DICE). The former, modeled in terms of carrier temperature, implies ballistic-like currents in nanoscale DG FinFETs. The latter, modeled in two dimensions with bulk inversion, increases drive current and, most significantly, gate capacitance, in nanoscale DG MOSFETs. |  | View paper | | ISBN: | 1-4200-6184-4 |
| Pages: | 732 |
| Hardcopy: | $199.99 |
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