Nano Science and Technology Institute
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs

Authors:J.G. Fossum and S. Chouksey
Affilation:University of Florida, US
Pages:510 - 511
Keywords:FinFET, velocity overshoot, drain-induced charge enhancement
Abstract:Saturation-region effects, unique to double-gate (DG) MOSFETs, are discussed and modeled in UFDG. The effects include carrier velocity overshoot and drain-induced charge enhancement (DICE). The former, modeled in terms of carrier temperature, implies ballistic-like currents in nanoscale DG FinFETs. The latter, modeled in two dimensions with bulk inversion, increases drive current and, most significantly, gate capacitance, in nanoscale DG MOSFETs.
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