Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs

Authors: J.G. Fossum and S. Chouksey

Affilation: University of Florida, United States

Pages: 510 - 511

Keywords: FinFET, velocity overshoot, drain-induced charge enhancement

Abstract:
Saturation-region effects, unique to double-gate (DG) MOSFETs, are discussed and modeled in UFDG. The effects include carrier velocity overshoot and drain-induced charge enhancement (DICE). The former, modeled in terms of carrier temperature, implies ballistic-like currents in nanoscale DG FinFETs. The latter, modeled in two dimensions with bulk inversion, increases drive current and, most significantly, gate capacitance, in nanoscale DG MOSFETs.

Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs

ISBN: 1-4200-6184-4
Pages: 732
Hardcopy: $139.95