Nano Science and Technology Institute
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Analytical Solutions for Long-Wide-Channel Thick-Base MOS Transistors I. Effects of Remote Boundary Conditions and Body Contacts

Authors:B.B. Jie and C-T Sah
Affilation:Peking University, CN
Pages:499 - 504
Keywords:MOS transistor, double integral drain current y-equation, surface-potential gate-voltage x-equation, flat-band current, remote contact types and lengths
Abstract:Analytical solutions and computed characteristics for long-wide-channel thick-base MOS transistors are reported. The second generation industrial-consensus surface potential approach is used. Decomposition of the 2-Dimensional transistor problem into two 1-D problems follows the 1966-Pao-Sah current- or Y-equation and the 1965-Sah-Pao voltage- or X-equation as modified by 2002-Gildenblatt-McAndrew-Victory and 2004-Sah-Jie to correct the physical-unreality imaginary electric field at flatband. The effects of the remote body boundary condition and contact type on drain-current vs gate-voltage characteristics are described, including the two asymptotic contact types (short-circuit and open-circuit) and geometry, as well as the two ancient approximations to avoid the divergent bipolar-transistor-like minority-carrier currents at MOS flatband.
Analytical Solutions for Long-Wide-Channel Thick-Base MOS Transistors I. Effects of Remote Boundary Conditions and Body ContactsView PDF of paper
ISBN:1-4200-6184-4
Pages:732
Hardcopy:$139.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map