Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond

Authors: M. Miura-Mattausch, N. Sadachika, M. Miyake, D. Navarro, T. Ezaki and H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, S. Miyamoto, R. Inagaki and Y. Furui

Affilation: Hiroshima University, Japan

Pages: 479 - 484

Keywords: MOSFET, surface potential, 45nm technology, compact model

Abstract:
HiSIM realizes both accurate and fast circuit simulation. The newly developed HiSIM2.4.0 includes required features in modeling for the 45nm technology node and beyond such as the STI stress effect. A major development is an improved model consistency, which enables modeling of the technology variation accurately. HiSIM2.4.0 includes also the binning option to take into account newly appearing device features which are not modeled yet.

HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond

ISBN: 1-4200-6184-4
Pages: 732
Hardcopy: $139.95