Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3

MEMS/NEMS: Modeling & Characterization Chapter 2

A new compact scalable circuit model for RF MEMS switches

Authors: H.M.R. Suy, H.G.A. Huizing, P.G. Steeneken and O.I. Yanson

Affilation: NXP Semiconductors, Netherlands

Pages: 65 - 68

Keywords: MEMS switches, compact model, circuit model

Abstract:
In this paper, a new compact scalable circuit model for RF MEMS switches is presented. This new one-dimensional model combines the computational speed of one-dimensional models, with the accuracy of multi-dimensional models. The model includes a wide range of physical phenomena, such as squeeze film damping, contact, fringing electrostatic fields, and membrane bending. In addition, a parasitic network is developed that models the skin effect in the switch. The model is written in Verilog-A for easy implementation in any circuit simulator. The model is extensively numerically tested, and is validated on CV, transient, and S-parameter measurements. In contrast to earlier 1D models, a higher level of accuracy is achieved without the compromise of a loss of computational speed or ease-of-use in circuit simulators.

A new compact scalable circuit model for RF MEMS switches

ISBN: 1-4200-6184-4
Pages: 732
Hardcopy: $139.95