A new compact scalable circuit model for RF MEMS switches

	Nanotech 2007 Vol. 3 Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 2: MEMS/NEMS: Modeling & Characterization
	A new compact scalable circuit model for RF MEMS switches
Authors:	H.M.R. Suy, H.G.A. Huizing, P.G. Steeneken and O.I. Yanson
Affilation:	NXP Semiconductors, NL
Pages:	65 - 68
Keywords:	MEMS switches, compact model, circuit model
Abstract:	In this paper, a new compact scalable circuit model for RF MEMS switches is presented. This new one-dimensional model combines the computational speed of one-dimensional models, with the accuracy of multi-dimensional models. The model includes a wide range of physical phenomena, such as squeeze film damping, contact, fringing electrostatic fields, and membrane bending. In addition, a parasitic network is developed that models the skin effect in the switch. The model is written in Verilog-A for easy implementation in any circuit simulator. The model is extensively numerically tested, and is validated on CV, transient, and S-parameter measurements. In contrast to earlier 1D models, a higher level of accuracy is achieved without the compromise of a loss of computational speed or ease-of-use in circuit simulators.
ISBN:	1-4200-6184-4
Pages:	732
Hardcopy:	$139.95

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