Nano Science and Technology Institute - NSTI  
Nano Science and Technology Institute   Home | Subscribe | Site Map  
  ABOUT | COURSES | EVENTS | PUBLICATIONS | LEADERSHIP | OUTREACH | NEWS | PRESS | JOBS | Nanotechnology Solutions
px
px fade_top
Publications
Nanotech 2008 CDROM
Nanotech 2007 CDROM
Nanotech 2006 CDROM
Nanotech 2005 CDROM
Nanotech 2004 CDROM
3 CDROM Special Offer
Nanotech 2008 Vol. 1
Nanotech 2008 Vol. 2
Nanotech 2008 Vol. 3
Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 2
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 4
Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 2
Nanotech 2006 Vol. 3
Nanotech 2005 Vol. 1
Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 3
WCM 2005
Nanotech 2004 Vol. 1
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 3
Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 3
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 2
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 2
MSM 2000
MSM 99
MSM 98
Index of Authors
Index of Keywords
Index of Affiliations
Library Request Form
Shopping Cart
Order Form
 
Publications Publications
Nanotech 2007 Vol. 1
p
 
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
 
Chapter 5: Nanostructured Materials and Devices
 

Zinc Gallate [ZnGa2O4] thin film phosphors for Field Emission Display application

Authors:Y.H. Yun, J.H. Jung and J.S. Choi
Affilation:Dongshin University, KR
Pages:368 - 371
Keywords:zinc gallate, Thin film, Photoluminescence
Abstract:Field emission display (FED) is being expected as one of the most promising FPD technologies. The practical FED technologies are requiring the improvements in durability, quality and reduction in manufacturing cost for the low voltage operating oxide phosphors and field emission array (FEA). First of all, the low voltage FED phosphors with high quality under high vacuum and high current density are directly related to a stable operation of FEA and a desirable image quality. Zinc gallate (ZnGa2O4) phosphor has received much attention in its application to low voltage field emission display (FED) and vacuum fluorescent display (VFD), since it has good luminescent characteristics and stability. In addition, ZnGa2O4 has been expected as a potential candidate among oxide phosphors to substituting sulfide-based phosphors in low-voltage cathode luminescence device. In this study, we have synthesized the ZnGa2O4 thin film phosphors on ITO (indium-tin oxide) glass via a sol-gel spinning coating method using zinc acetate dihydrate, gallium (III) nitrate hydrate and 2-methoxiethanol as solution. The thin film phosphors on ITO glass were fired and annealed (in 3% H2/Ar) at 500 and 600 . The AFM surface morphologies of the thin film phosphors on ITO glass showed the sharp-cornered particles and spherical particles. The XRD patterns of the phosphors, synthesized on ITO glass substrate, showed the (220) and (311) peaks of ZnGa2O4 phase. The ZnGa2O4 thin film phosphors exhibited the self-activated blue emission spectrum in the wavelength of 410nm and the weak UV emission spectrum near 370nm.
ISBN:1-4200-6182-8
Pages:726
Hardcopy:$199.99
 
Order:Mail/Fax Form
Special:3 CD Set — 15% off with Free Shipping
Up
nanoPRwire™
nanoPRwire
News Headlines
nano World news
 
 
 
 
px
© Nano Science and Technology Institute     About NSTI | Terms of Use | Privacy Policy | Contact