Nano Science and Technology Institute
Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
Chapter 5: Nanostructured Materials and Devices

Atomistic Modeling for Boron Diffusion in Strained Silicon Substrate

Authors:Y-K Kim, K-S Yoon, J-S Kim, H-G Kim and T. Won
Affilation:Inha University, KR
Pages:328 - 331
Keywords:atomistic modeling, strained silicon, Boron, stresses
Abstract:We report our KMC study on the effect of strain on B diffusion in silicon and relaxed SiGe layer by assuming a virtual strained structure with charged defect energy and diffusivity. The simulation results imply that boron diffusion is drastically retarded in a strained Si and relaxed SiGe when compared to a case with unstrained silicon. We also derived the distribution of physical stress along the heterojunction interface with varying the Ge implant for giving rise to a strain to the pure silicon.
Atomistic Modeling for Boron Diffusion in Strained Silicon SubstrateView PDF of paper
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