Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1

Nanostructured Materials and Devices Chapter 5

Atomistic Modeling for Boron Diffusion in Strained Silicon Substrate

Authors: Y-K Kim, K-S Yoon, J-S Kim, H-G Kim and T. Won

Affilation: Inha University, Korea

Pages: 328 - 331

Keywords: atomistic modeling, strained silicon, Boron, stresses

Abstract:
We report our KMC study on the effect of strain on B diffusion in silicon and relaxed SiGe layer by assuming a virtual strained structure with charged defect energy and diffusivity. The simulation results imply that boron diffusion is drastically retarded in a strained Si and relaxed SiGe when compared to a case with unstrained silicon. We also derived the distribution of physical stress along the heterojunction interface with varying the Ge implant for giving rise to a strain to the pure silicon.

Atomistic Modeling for Boron Diffusion in Strained Silicon Substrate

ISBN: 1-4200-6182-8
Pages: 726
Hardcopy: $139.95