Atomistic Modeling for Boron Diffusion in Strained Silicon Substrate

	Nanotech 2007 Vol. 1 Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1 Chapter 5: Nanostructured Materials and Devices
	Atomistic Modeling for Boron Diffusion in Strained Silicon Substrate
Authors:	Y-K Kim, K-S Yoon, J-S Kim, H-G Kim and T. Won
Affilation:	Inha University, KR
Pages:	328 - 331
Keywords:	atomistic modeling, strained silicon, Boron, stresses
Abstract:	We report our KMC study on the effect of strain on B diffusion in silicon and relaxed SiGe layer by assuming a virtual strained structure with charged defect energy and diffusivity. The simulation results imply that boron diffusion is drastically retarded in a strained Si and relaxed SiGe when compared to a case with unstrained silicon. We also derived the distribution of physical stress along the heterojunction interface with varying the Ge implant for giving rise to a strain to the pure silicon.
ISBN:	1-4200-6182-8
Pages:	726
Hardcopy:	$139.95

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