| |
 | Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
Chapter 5: Nanostructured Materials and Devices |
| | Atomistic Modeling for Boron Diffusion in Strained Silicon Substrate | | Authors: | Y-K Kim, K-S Yoon, J-S Kim, H-G Kim and T. Won | | Affilation: | Inha University, KR | | Pages: | 328 - 331 | | Keywords: | atomistic modeling, strained silicon, Boron, stresses | | Abstract: | We report our KMC study on the effect of strain on B diffusion in silicon and relaxed SiGe layer by assuming a virtual strained structure with charged defect energy and diffusivity. The simulation results imply that boron diffusion is drastically retarded in a strained Si and relaxed SiGe when compared to a case with unstrained silicon. We also derived the distribution of physical stress along the heterojunction interface with varying the Ge implant for giving rise to a strain to the pure silicon. | | ISBN: | 1-4200-6182-8 |
| Pages: | 726 |
| Hardcopy: | $199.99 |
|
| Order: | Mail/Fax Form |
| Special: | 3 CD Set — 15% off with Free Shipping |
| Up | |
|
| nanoPRwire™ |
 |
| News Headlines |
 |
|
|
| |
| |
|
| | |
| |
|
|
