Authors: Y-K Kim, K-S Yoon, J-S Kim, H-G Kim and T. Won
Affilation: Inha University, Korea
Pages: 328 - 331
Keywords: atomistic modeling, strained silicon, Boron, stresses
We report our KMC study on the effect of strain on B diffusion in silicon and relaxed SiGe layer by assuming a virtual strained structure with charged defect energy and diffusivity. The simulation results imply that boron diffusion is drastically retarded in a strained Si and relaxed SiGe when compared to a case with unstrained silicon. We also derived the distribution of physical stress along the heterojunction interface with varying the Ge implant for giving rise to a strain to the pure silicon.