Nano Science and Technology Institute
Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
 
Chapter 3: Nanowires
 

A unique opportunity for industrial scale fabrication of semiconductor nanowire-based devices

Authors:B. Nikoobkht
Affilation:National Institute of Standards and Technology, US
Pages:241 - 243
Keywords:nanowire, zinc oxide, nanodevice, directed assembly
Abstract:A method is developed which enables horizontal growth of semiconductor nanowires on predefined locations. In this architecture, despite most bottom-up approaches, there is no need for post-growth treatments and alignment of nanowires on a given surface. In the presented method, sapphire substrate is patterned with gold catalyst using photolithography. After growth of nanowires, using a 2nd step of photolithography, electric contacts are placed precisely on nanowires. Using this technique, large scale electrically addressable nanowires and top-gated field effect nanowire transistors have been made and their electric transport properties have been measured.
A unique opportunity for industrial scale fabrication of semiconductor nanowire-based devicesView PDF of paper
ISBN:1-4200-6182-8
Pages:726
Hardcopy:$139.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map