A unique opportunity for industrial scale fabrication of semiconductor nanowire-based devices

	Nanotech 2007 Vol. 1 Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1 Chapter 3: Nanowires
	A unique opportunity for industrial scale fabrication of semiconductor nanowire-based devices
Authors:	B. Nikoobkht
Affilation:	National Institute of Standards and Technology, US
Pages:	241 - 243
Keywords:	nanowire, zinc oxide, nanodevice, directed assembly
Abstract:	A method is developed which enables horizontal growth of semiconductor nanowires on predefined locations. In this architecture, despite most bottom-up approaches, there is no need for post-growth treatments and alignment of nanowires on a given surface. In the presented method, sapphire substrate is patterned with gold catalyst using photolithography. After growth of nanowires, using a 2nd step of photolithography, electric contacts are placed precisely on nanowires. Using this technique, large scale electrically addressable nanowires and top-gated field effect nanowire transistors have been made and their electric transport properties have been measured.
ISBN:	1-4200-6182-8
Pages:	726
Hardcopy:	$139.95

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