Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1

Nanowires Chapter 3

A unique opportunity for industrial scale fabrication of semiconductor nanowire-based devices

Authors: B. Nikoobkht

Affilation: National Institute of Standards and Technology, United States

Pages: 241 - 243

Keywords: nanowire, zinc oxide, nanodevice, directed assembly

Abstract:
A method is developed which enables horizontal growth of semiconductor nanowires on predefined locations. In this architecture, despite most bottom-up approaches, there is no need for post-growth treatments and alignment of nanowires on a given surface. In the presented method, sapphire substrate is patterned with gold catalyst using photolithography. After growth of nanowires, using a 2nd step of photolithography, electric contacts are placed precisely on nanowires. Using this technique, large scale electrically addressable nanowires and top-gated field effect nanowire transistors have been made and their electric transport properties have been measured.

A unique opportunity for industrial scale fabrication of semiconductor nanowire-based devices

ISBN: 1-4200-6182-8
Pages: 726
Hardcopy: $139.95