Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1

Nano Electronics & Photonics Chapter 2

Nanoscale Device Modeling and Simulation: Multiple Independent gate Field Effect Transistor

Authors: H-G Kim

Affilation: Inha University, Korea

Pages: 218 - 221

Keywords: MIGFET, SCE, Quantum Mechanical

Abstract:
we report our numerical modeling and simulation results for MIGFET. The simulation result revealed that MIGFET demonstrates dynamic modulation of sub-threshold swing and threshold voltage by biasing the second gate. And Short channel effects are appreciably suppressed for MIGFET in terms of DIBL, voltage roll-off.

Nanoscale Device Modeling and Simulation: Multiple Independent gate Field Effect Transistor

ISBN: 1-4200-6182-8
Pages: 726
Hardcopy: $139.95