Nano Science and Technology Institute
Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
 
Chapter 2: Nano Electronics & Photonics
 

Nanoscale Device Modeling and Simulation: Multiple Independent gate Field Effect Transistor

Authors:H-G Kim
Affilation:Inha University, KR
Pages:218 - 221
Keywords:MIGFET, SCE, Quantum Mechanical
Abstract:we report our numerical modeling and simulation results for MIGFET. The simulation result revealed that MIGFET demonstrates dynamic modulation of sub-threshold swing and threshold voltage by biasing the second gate. And Short channel effects are appreciably suppressed for MIGFET in terms of DIBL, voltage roll-off.
Nanoscale Device Modeling and Simulation: Multiple Independent gate Field Effect TransistorView PDF of paper
ISBN:1-4200-6182-8
Pages:726
Hardcopy:$139.95
 
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