Nanoscale Device Modeling and Simulation: Multiple Independent gate Field Effect Transistor

	Nanotech 2007 Vol. 1 Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1 Chapter 2: Nano Electronics & Photonics
	Nanoscale Device Modeling and Simulation: Multiple Independent gate Field Effect Transistor
Authors:	H-G Kim
Affilation:	Inha University, KR
Pages:	218 - 221
Keywords:	MIGFET, SCE, Quantum Mechanical
Abstract:	we report our numerical modeling and simulation results for MIGFET. The simulation result revealed that MIGFET demonstrates dynamic modulation of sub-threshold swing and threshold voltage by biasing the second gate. And Short channel effects are appreciably suppressed for MIGFET in terms of DIBL, voltage roll-off.
ISBN:	1-4200-6182-8
Pages:	726
Hardcopy:	$139.95

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