Nano Science and Technology Institute
Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
 
Chapter 2: Nano Electronics & Photonics
 

Optimization and Examination of Device Characteristics Due to Process Variation in 10 nm FinFET Using Fully Self-Consistent Quantum Mechanical Simulator

Authors:H. Khan, D. Mamaluy and D. Vasileska
Affilation:Arizona State University, US
Pages:181 - 184
Keywords:FinFET, Quantum Transport, SCE, Process variation
Abstract:We use Contact Block Reduction (CBR)method to investigate the critical issues relating optimization of device performance in 10 nm FinFET operating in ballistic regime. The goal of this work is to achieve the desired values of parameters characterizing device performance as projected by ITRS for double-gate high performance logic technology devices with physical gate length of nm. We also investigate the device characteristics due to process variation. The changes in device characteristics for fin width, oxide thickness, doping decaying slope, etc., varying within 10% of their desired values have been obtained. Slow process corner analysis (T = 110C and 10% reduction in the supply voltage) has also been performed to evaluate device performance in worst case operating condition. Simulation results show degradation in on-current, subthreshold slope, DIBL as well as cut-off frequency of the device. Our simulation results show that desired on-current and cut-off frequency can be achieved with a realistic doping profile.
Optimization and Examination of Device Characteristics Due to Process Variation in 10 nm FinFET Using Fully Self-Consistent Quantum Mechanical SimulatorView PDF of paper
ISBN:1-4200-6182-8
Pages:726
Hardcopy:$139.95
 
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