Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1

Nano Electronics & Photonics Chapter 2

A Novel Nonvolatile Memory Using SiOx-Cladded Si Quantum Dots

Authors: R.S. Velampati and F.C. Jain

Affilation: University of Connecticut, United States

Pages: 156 - 157

Keywords: nonvolatile memory, quantum dots

Abstract:
This paper presents characteristics of a novel quantum dot gate nonvolatile memory (QDNVM) whose threshold shift can be varied by adjusting the duration and magnitude of the Programming Voltage pulse applied at the drain end. For example, in long-channel FET like structures, we observed a threshold voltage shift (Vt) of 1 V for 10V/10s stress pulse. Our preliminary data suggest: (i) faster 'Write' time and (ii) longer retention time for these devices as compared to conventional Si nanocrystal gate nonvolatile memories reported in the literature.

A Novel Nonvolatile Memory Using SiOx-Cladded Si Quantum Dots

ISBN: 1-4200-6182-8
Pages: 726
Hardcopy: $139.95