A Novel Nonvolatile Memory Using SiOx-Cladded Si Quantum Dots

	Nanotech 2007 Vol. 1 Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1 Chapter 2: Nano Electronics & Photonics
	A Novel Nonvolatile Memory Using SiOx-Cladded Si Quantum Dots
Authors:	R.S. Velampati and F.C. Jain
Affilation:	University of Connecticut, US
Pages:	156 - 157
Keywords:	nonvolatile memory, quantum dots
Abstract:	This paper presents characteristics of a novel quantum dot gate nonvolatile memory (QDNVM) whose threshold shift can be varied by adjusting the duration and magnitude of the Programming Voltage pulse applied at the drain end. For example, in long-channel FET like structures, we observed a threshold voltage shift (Vt) of 1 V for 10V/10s stress pulse. Our preliminary data suggest: (i) faster 'Write' time and (ii) longer retention time for these devices as compared to conventional Si nanocrystal gate nonvolatile memories reported in the literature.
ISBN:	1-4200-6182-8
Pages:	726
Hardcopy:	$139.95

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