Hybridization of CMOS with CNT-based Complementary Nano Electro-Mechanical Switch for Low-Leakage and Robust Embedded Memory Design

	Nanotech 2007 Vol. 1 Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1 Chapter 2: Nano Electronics & Photonics
	Hybridization of CMOS with CNT-based Complementary Nano Electro-Mechanical Switch for Low-Leakage and Robust Embedded Memory Design
Authors:	R.S. Chakraborty, S. Narasimhan and S. Bhunia
Affilation:	Case Western Reserve University, US
Pages:	134 - 137
Keywords:	CNEMS, hybridization, leakage power, robust embedded memory design, bitline leakage
Abstract:	Embedded static random access memory (SRAM) that constitutes an integral part of nanoelectronic systems, experiences two major challenges with aggressive technology scaling: 1) exponential increase in leakage current [1] and 2) decrease in robustness of read/write/hold operation [1]. We propose, for the first time, integration of carbon nanotube (CNT) based nano electro-mechanical switches (NEMS) with CMOS-based SRAM to achieve significant improvement in: 1) leakage power in standby mode (~19X compared to the best existing technique) and 2) robustness of read/write operation due to bitline leakage reduction (~55X).
ISBN:	1-4200-6182-8
Pages:	726
Hardcopy:	$139.95

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