Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1

Nano Electronics & Photonics Chapter 2

Theoretical study of Graphene Nanoribbon Field-Effect Transistors

Authors: G. Liang, N. Neophytou, D. Nikonov and M. Lundstrom

Affilation: Purdue Unioversity, United States

Pages: 127 - 130

Keywords: MOSFET, carbon nanoribbon, CNR

Abstract:
In this work, we theoretically studied the electronic structure of CNRs using pz-orbital tight-binding model as well as a simple analytical formula. Moreover, the ballistic performance of CNR MOSFETs using a semi-classical “top-of-the-barrier” MOSFET model is investigated. 5nm wide CNR MOSFETs show comparable performance with 1.6 nm diameter CNT MOSFETs, and outperform silicon MOSFETs by over 100%.

Theoretical study of Graphene Nanoribbon Field-Effect Transistors

ISBN: 1-4200-6182-8
Pages: 726
Hardcopy: $139.95