Theoretical study of Graphene Nanoribbon Field-Effect Transistors

	Nanotech 2007 Vol. 1 Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1 Chapter 2: Nano Electronics & Photonics
	Theoretical study of Graphene Nanoribbon Field-Effect Transistors
Authors:	G. Liang, N. Neophytou, D. Nikonov and M. Lundstrom
Affilation:	Purdue Unioversity, US
Pages:	127 - 130
Keywords:	MOSFET, carbon nanoribbon, CNR
Abstract:	In this work, we theoretically studied the electronic structure of CNRs using pz-orbital tight-binding model as well as a simple analytical formula. Moreover, the ballistic performance of CNR MOSFETs using a semi-classical “top-of-the-barrier” MOSFET model is investigated. 5nm wide CNR MOSFETs show comparable performance with 1.6 nm diameter CNT MOSFETs, and outperform silicon MOSFETs by over 100%.
ISBN:	1-4200-6182-8
Pages:	726
Hardcopy:	$139.95

Order:	Mail/Fax Form
Special:	3 CD Set — 15% off with Free Shipping
Up