Nano Science and Technology Institute
Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
 
Chapter 2: Nano Electronics & Photonics
 

Theoretical study of Graphene Nanoribbon Field-Effect Transistors

Authors:G. Liang, N. Neophytou, D. Nikonov and M. Lundstrom
Affilation:Purdue Unioversity, US
Pages:127 - 130
Keywords:MOSFET, carbon nanoribbon, CNR
Abstract:In this work, we theoretically studied the electronic structure of CNRs using pz-orbital tight-binding model as well as a simple analytical formula. Moreover, the ballistic performance of CNR MOSFETs using a semi-classical “top-of-the-barrier” MOSFET model is investigated. 5nm wide CNR MOSFETs show comparable performance with 1.6 nm diameter CNT MOSFETs, and outperform silicon MOSFETs by over 100%.
Theoretical study of Graphene Nanoribbon Field-Effect TransistorsView PDF of paper
ISBN:1-4200-6182-8
Pages:726
Hardcopy:$139.95
 
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