Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1

Nano Electronics & Photonics Chapter 2

Kinetic Monte Carlo Study on Silicon Pre-Implant Technique

Authors: J.S. Kim, Y.K. Kim, K.S. Yoon and T. Won

Affilation: Inha univ., Korea

Pages: 115 - 118

Keywords: kinetic Monte Carlo, Boron

Abstract:
In this work, we investigated the effect of Si pre-implantation on the low energy B implant and boron activation enhancement during the post-implant annealing process using KMC. For investigating Si pre implantation effect, Si implantation is performed with dosage of 3 x 1014 /cm2 and with implantation energy of 200 keV. Further, B implantation is performed with dosage of 4.5 x 1015/cm2 and implantation energy 2 keV, followed by annealing process is performed at 790 C for 18 sec.

Kinetic Monte Carlo Study on Silicon Pre-Implant Technique

ISBN: 1-4200-6182-8
Pages: 726
Hardcopy: $139.95