Carbon Nanotube Transistors with 60mV/decade Switching and its Capacitance Measurement

	Nanotech 2007 Vol. 1 Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1 Chapter 1: Carbon Nanotubes
	Carbon Nanotube Transistors with 60mV/decade Switching and its Capacitance Measurement
Authors:	Y. Lu, H. Dai and Y. Nishi
Affilation:	Stanford University, US
Pages:	57 - 60
Keywords:	carbon nanotube, FET, capacitance, mobility
Abstract:	Recently, we have been able to approach the ultimate vertical scaling limit of carbon nanotube field effect transistors (FETs) and reliably achieve S ~ 60 mV/decade at room temperature, by non-covalent functionalization of single walled carbon nonotubes (SWNTs) with ploy-T DNA molecules, which can impart functional groups of sufficient density and stability for uniform and conformal ALD of high-? dielectrics (HfO2) with thickness down to 2-3 nm on SWNTs. Moreover, the small top gate stack capacitance (~300aF/um) of the SWNT FET has been successfully measured directly, using a special technique. The mobility of the SWNT FETs at room temperature is also extracted by the capacitance measured directly.
ISBN:	1-4200-6182-8
Pages:	726
Hardcopy:	$139.95

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