Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1

Carbon Nanotubes Chapter 1

Carbon Nanotube Transistors with 60mV/decade Switching and its Capacitance Measurement

Authors: Y. Lu, H. Dai and Y. Nishi

Affilation: Stanford University, United States

Pages: 57 - 60

Keywords: carbon nanotube, FET, capacitance, mobility

Abstract:
Recently, we have been able to approach the ultimate vertical scaling limit of carbon nanotube field effect transistors (FETs) and reliably achieve S ~ 60 mV/decade at room temperature, by non-covalent functionalization of single walled carbon nonotubes (SWNTs) with ploy-T DNA molecules, which can impart functional groups of sufficient density and stability for uniform and conformal ALD of high-? dielectrics (HfO2) with thickness down to 2-3 nm on SWNTs. Moreover, the small top gate stack capacitance (~300aF/um) of the SWNT FET has been successfully measured directly, using a special technique. The mobility of the SWNT FETs at room temperature is also extracted by the capacitance measured directly.

Carbon Nanotube Transistors with 60mV/decade Switching and its Capacitance Measurement

ISBN: 1-4200-6182-8
Pages: 726
Hardcopy: $139.95