Lu H., Liang X., Wang W., Taur Y.
Univ. California, San Diego, US
Keywords: double gate MOSFET, short-channel effects
This talk presents analytical modeling of short-channel effect in double-gate MOSFETs. 2-D Poisson’s eq. is solved as a boundary value problem in subthreshold. 2-D potential distribution and subthreshold currents have been calculated and verified by 2-D numerical simulation. The extracted threshold roll-off, drain induced barrier lowering, and subthreshold slope as a function of channel length are suitable for implementation in compact models.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 741 - 744
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9767985-8-1