Authors: H. Lu, X. Liang, W. Wang and Y. Taur
Affilation: Univ. California, San Diego, United States
Pages: 741 - 744
Keywords: double-gate MOSFET, short-channel effects
This talk presents analytical modeling of short-channel effect in double-gate MOSFETs. 2-D Poisson’s eq. is solved as a boundary value problem in subthreshold. 2-D potential distribution and subthreshold currents have been calculated and verified by 2-D numerical simulation. The extracted threshold roll-off, drain induced barrier lowering, and subthreshold slope as a function of channel length are suitable for implementation in compact models.