Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

Compact Modeling of Short Channel Double-Gate MOSFETs

Authors:H. Lu, X. Liang, W. Wang and Y. Taur
Affilation:Univ. California, San Diego, US
Pages:741 - 744
Keywords:double-gate MOSFET, short-channel effects
Abstract:This talk presents analytical modeling of short-channel effect in double-gate MOSFETs. 2-D Poisson’s eq. is solved as a boundary value problem in subthreshold. 2-D potential distribution and subthreshold currents have been calculated and verified by 2-D numerical simulation. The extracted threshold roll-off, drain induced barrier lowering, and subthreshold slope as a function of channel length are suitable for implementation in compact models.
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