Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Charge-storage calculation for Si-based bipolar transistors from device simulation

Authors: M. Schröter and H. Tran

Affilation: UCSD, United States

Pages: 735 - 740

Keywords: bipolar transistors, compact modeling, hicum

Abstract:
Various methods for calculating regional charge storage components in bipolar transistors from<br>device simulation results are compared with respect to their usefulness for compact modeling. The<br>methods are evaluated for Si and SiGe transistors with very different doping profiles representing<br>existing process technologies. Causes for the failure of certain methods are discussed. A selected<br>method is then applied to a regional analysis of bias dependent compact model components.

Charge-storage calculation for Si-based bipolar transistors from device simulation

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95