Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Charge-storage calculation for Si-based bipolar transistors from device simulation

Authors:M. Schröter and H. Tran
Affilation:UCSD, US
Pages:735 - 740
Keywords:bipolar transistors, compact modeling, hicum
Abstract:Various methods for calculating regional charge storage components in bipolar transistors from
device simulation results are compared with respect to their usefulness for compact modeling. The
methods are evaluated for Si and SiGe transistors with very different doping profiles representing
existing process technologies. Causes for the failure of certain methods are discussed. A selected
method is then applied to a regional analysis of bias dependent compact model components.
Charge-storage calculation for Si-based bipolar transistors from device simulationView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
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