Authors: R.M. Malladi, K.M. Newton and M.S. Schroter
Affilation: IBM Systems and Technology, United States
Pages: 729 - 734
Keywords: SiGe, HBT, Hicum, modeling
In this invited paper, we present the methodology for advanced SiGe HBT modeling and its integration into BiCMOS design kits. We review various model choices and describe, in detail, the extraction of the High Current Model (HiCUM) for 50-200GHz devices. We obtain excellent correlation with data covering DC, S-parameters up to 110 GHz, high-frequency noise and distortion characteristics. Issues related to process statistics and Monte-Carlo simulations will be discussed in the presentation.