Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Development and Design Kit Integration of a Scalable and Statistical High Current Model for Advanced SiGe HBTs

Authors:R.M. Malladi, K.M. Newton and M.S. Schroter
Affilation:IBM Systems and Technology, US
Pages:729 - 734
Keywords:SiGe, HBT, Hicum, modeling
Abstract:In this invited paper, we present the methodology for advanced SiGe HBT modeling and its integration into BiCMOS design kits. We review various model choices and describe, in detail, the extraction of the High Current Model (HiCUM) for 50-200GHz devices. We obtain excellent correlation with data covering DC, S-parameters up to 110 GHz, high-frequency noise and distortion characteristics. Issues related to process statistics and Monte-Carlo simulations will be discussed in the presentation.
Development and Design Kit Integration of a Scalable and Statistical High Current Model for Advanced SiGe HBTsView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
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