Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

A Unified Parameter Extraction Procedure for Scalable Bipolar Transistor Model Mextram

Authors: H-C Wu, S. Mijalkovic and J.N. Burghartz

Affilation: Delft university of technology, Netherlands

Pages: 872 - 875

Keywords: scalable Mextram model, unified parameter extraction, VHDL Verilog-A, SiGe HBT

Abstract:
A unified parameters extraction procedure for temperature and geometry scalable bipolar transistor model Mextram has been demonstrated using an example of high-speed SiGe HBT technology. The essential feature of the proposed methodology is a direct extraction of the scaling parameters from the measured electrical characteristics and the model parameters are extracted only once for a single reference geometry.


ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95

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