Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

A Unified Parameter Extraction Procedure for Scalable Bipolar Transistor Model Mextram

Authors:H-C Wu, S. Mijalkovic and J.N. Burghartz
Affilation:Delft university of technology, NL
Pages:872 - 875
Keywords:scalable Mextram model, unified parameter extraction, VHDL Verilog-A, SiGe HBT
Abstract:A unified parameters extraction procedure for temperature and geometry scalable bipolar transistor model Mextram has been demonstrated using an example of high-speed SiGe HBT technology. The essential feature of the proposed methodology is a direct extraction of the scaling parameters from the measured electrical characteristics and the model parameters are extracted only once for a single reference geometry.
A Unified Parameter Extraction Procedure for Scalable Bipolar Transistor Model MextramView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
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