A Unified Parameter Extraction Procedure for Scalable Bipolar Transistor Model Mextram

	Nanotech 2006 Vol. 3 Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 7: Compact Modeling
	A Unified Parameter Extraction Procedure for Scalable Bipolar Transistor Model Mextram
Authors:	H-C Wu, S. Mijalkovic and J.N. Burghartz
Affilation:	Delft university of technology, NL
Pages:	872 - 875
Keywords:	scalable Mextram model, unified parameter extraction, VHDL Verilog-A, SiGe HBT
Abstract:	A unified parameters extraction procedure for temperature and geometry scalable bipolar transistor model Mextram has been demonstrated using an example of high-speed SiGe HBT technology. The essential feature of the proposed methodology is a direct extraction of the scaling parameters from the measured electrical characteristics and the model parameters are extracted only once for a single reference geometry.
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ISBN:	0-9767985-8-1
Pages:	913
Hardcopy:	$119.95

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