Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

Interrelations between Threshold Voltage Definitions and Extraction Methods

Authors:M.C. Schneider, C. Galup-Montoro, M.B. Machado and A.I.A. Cunha
Affilation:Federal University of Santa Catarina, BR
Pages:868 - 871
Keywords:MOSFET threshold voltage, MOSFET parameter extraction, MOSFET modeling
Abstract:This paper presents a brief discussion on the main MOSFET threshold voltage definitions available in the literature as well as on associated extraction methodologies. In order to compare these definitions and methodologies, we take advantage of the Advanced Compact MOSFET (ACM) model, which accurately relates surface potential to inversion charge density in all regions of operation. A new robust and precise extraction method based on the transconductance-to-current ratio characteristic is proposed, compared with already existing methods, and experimentally verified in 0.18 micrometer CMOS technology.
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