Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

A transient circuit model for a phase change memory element

Authors:H.G.A. Huizing, D. Tio Castro, J.C.J. Paasschens and M.H.R. Lankhorst
Affilation:Philips, NL
Pages:860 - 863
Keywords:lumped element model phase change memory
Abstract:A transient lumped element model for a phase change memory (PCM) cell is developed for use in a circuit simulator. Unlike existing models, this model calculates threshold voltage and off-state resistance drift as found in PCM-cells. After an explanation of the model, simulations results are shown and compared with measurements.
A transient circuit model for a phase change memory elementView PDF of paper
Order:Mail/Fax Form
© 2017 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map