Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

A transient circuit model for a phase change memory element

Authors: H.G.A. Huizing, D. Tio Castro, J.C.J. Paasschens and M.H.R. Lankhorst

Affilation: Philips, Netherlands

Pages: 860 - 863

Keywords: lumped element model phase change memory

Abstract:
A transient lumped element model for a phase change memory (PCM) cell is developed for use in a circuit simulator. Unlike existing models, this model calculates threshold voltage and off-state resistance drift as found in PCM-cells. After an explanation of the model, simulations results are shown and compared with measurements.

A transient circuit model for a phase change memory element

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95