Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Compact Model Methodology for Dual-Stress Nitride Liner Films in a 90nm SOI ULSI Technology

Authors:R.Q. Williams, D. Chidambarrao, J.H. McCullen, S. Narasimha, T.G. Mitchell and D. Onsongo
Affilation:IBM Corporation, US
Pages:858 - 859
Keywords:compact model, nitride stress liner, SOI, netlisting, extraction
Abstract:This work presents a novel methodology for a physically-based, layout-dependent nitride liner stress model that works with readily-available compact models. The methodology includes a data-calibrated, semi-empricial model and is tightly-coupled to circuit netlist extraction for accurate results. The model formulation is summarized and simulation results for an SOI implementation are provided.
Compact Model Methodology for Dual-Stress Nitride Liner Films in a 90nm SOI ULSI TechnologyView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
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