Compact Model Methodology for Dual-Stress Nitride Liner Films in a 90nm SOI ULSI Technology

	Nanotech 2006 Vol. 3 Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 7: Compact Modeling
	Compact Model Methodology for Dual-Stress Nitride Liner Films in a 90nm SOI ULSI Technology
Authors:	R.Q. Williams, D. Chidambarrao, J.H. McCullen, S. Narasimha, T.G. Mitchell and D. Onsongo
Affilation:	IBM Corporation, US
Pages:	858 - 859
Keywords:	compact model, nitride stress liner, SOI, netlisting, extraction
Abstract:	This work presents a novel methodology for a physically-based, layout-dependent nitride liner stress model that works with readily-available compact models. The methodology includes a data-calibrated, semi-empricial model and is tightly-coupled to circuit netlist extraction for accurate results. The model formulation is summarized and simulation results for an SOI implementation are provided.
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ISBN:	0-9767985-8-1
Pages:	913
Hardcopy:	$119.95

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