Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Compact Model Methodology for Dual-Stress Nitride Liner Films in a 90nm SOI ULSI Technology

Authors: R.Q. Williams, D. Chidambarrao, J.H. McCullen, S. Narasimha, T.G. Mitchell and D. Onsongo

Affilation: IBM Corporation, United States

Pages: 858 - 859

Keywords: compact model, nitride stress liner, SOI, netlisting, extraction

Abstract:
This work presents a novel methodology for a physically-based, layout-dependent nitride liner stress model that works with readily-available compact models. The methodology includes a data-calibrated, semi-empricial model and is tightly-coupled to circuit netlist extraction for accurate results. The model formulation is summarized and simulation results for an SOI implementation are provided.

Compact Model Methodology for Dual-Stress Nitride Liner Films in a 90nm SOI ULSI Technology

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95