Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Compact Modeling of Threshold Voltage in Nanoscale Strained-Si/SiGe MOSFETs

Authors:S. Nawal, V. Venkataraman and M.J. Kumar
Affilation:Indian Institute of Technology, IN
Pages:854 - 857
Keywords:strained Si/SiGe MOSFET, threshold voltage, compact modeling, simulation
Abstract:A simplae compact model for the threshold voltage of Strained Si/SiGe MOSFET is reported for the first time. This model accurately predicts the effects of Ge content and other device parameters on threshold voltage. The accuracy of the model is verified using two-dimensional numerical simulation.
Compact Modeling of Threshold Voltage in Nanoscale Strained-Si/SiGe MOSFETsView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
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