Authors: S. Nawal, V. Venkataraman and M.J. Kumar
Affilation: Indian Institute of Technology, India
Pages: 854 - 857
Keywords: strained Si/SiGe MOSFET, threshold voltage, compact modeling, simulation
A simplae compact model for the threshold voltage of Strained Si/SiGe MOSFET is reported for the first time. This model accurately predicts the effects of Ge content and other device parameters on threshold voltage. The accuracy of the model is verified using two-dimensional numerical simulation.