Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

A Compact Model of Ballistic CNFET for Circuit Simulation

Authors:B.C. Paul, S. Fujita, M. Okajima and T. Lee
Affilation:Toshiba America Research Inc., US
Pages:846 - 849
Keywords:compact model of CNFET, CNFET circuit simulation
Abstract:As silicon technology is approaching to its limit, Carbon nanotube FETs (CNFET) are shown to have potential of taking this place in the post silicon era. Consequently, interests have grown to predict the performance of these devices in circuits and systems. However, circuit simulation using CNFET at present is a difficult task, because most of the developed physical device models are numerical, which conventional circuit simulators like SPICE can not handle.
In this paper, we propose a circuit compatible quasi-analytical device model, which can be used for different semiconducting CNFET structures at all operating conditions in the digital circuit application domain. The model is developed assuming the ballistic transport in MOSFET type CNFET and shown to have close agreement with physical models. We have verified our model for different carbon nanotube diameters (1-3nm) and obtained close match with the physical models in all cases.
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