Authors: B.C. Paul, S. Fujita, M. Okajima and T. Lee
Affilation: Toshiba America Research Inc., United States
Pages: 846 - 849
Keywords: compact model of CNFET, CNFET circuit simulation
As silicon technology is approaching to its limit, Carbon nanotube FETs (CNFET) are shown to have potential of taking this place in the post silicon era. Consequently, interests have grown to predict the performance of these devices in circuits and systems. However, circuit simulation using CNFET at present is a difficult task, because most of the developed physical device models are numerical, which conventional circuit simulators like SPICE can not handle. <br>In this paper, we propose a circuit compatible quasi-analytical device model, which can be used for different semiconducting CNFET structures at all operating conditions in the digital circuit application domain. The model is developed assuming the ballistic transport in MOSFET type CNFET and shown to have close agreement with physical models. We have verified our model for different carbon nanotube diameters (1-3nm) and obtained close match with the physical models in all cases.