Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

Enhanced Junction Capacitance Modeling

Authors:F.G. Anderson, R.M. Rassel and M.A. Lavoie
Affilation:IBM Microelectronics, US
Pages:842 - 845
Keywords:varactor, junction capacitance, modeling
Abstract:The current standard diode junction capacitance models do not yield high quality models for hyperabrupt junction varactors that are constructed from several implants. We describe a new enhancement that employs the actual (exponential) doping profiles that does yield good fits and physical parameters.
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