 | Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling |
Enhanced Junction Capacitance Modeling | |
| Authors: | F.G. Anderson, R.M. Rassel and M.A. Lavoie |
| Affilation: | IBM Microelectronics, US |
| Pages: | 842 - 845 |
| Keywords: | varactor, junction capacitance, modeling |
| Abstract: | The current standard diode junction capacitance models do not yield high quality models for hyperabrupt junction varactors that are constructed from several implants. We describe a new enhancement that employs the actual (exponential) doping profiles that does yield good fits and physical parameters. |
 | View PDF of paper |
| ISBN: | 0-9767985-8-1 |
| Pages: | 913 |
| Hardcopy: | $119.95 |
| Order: | Mail/Fax Form |
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