Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Enhanced Junction Capacitance Modeling

Authors: F.G. Anderson, R.M. Rassel and M.A. Lavoie

Affilation: IBM Microelectronics, United States

Pages: 842 - 845

Keywords: varactor, junction capacitance, modeling

Abstract:
The current standard diode junction capacitance models do not yield high quality models for hyperabrupt junction varactors that are constructed from several implants. We describe a new enhancement that employs the actual (exponential) doping profiles that does yield good fits and physical parameters.

Enhanced Junction Capacitance Modeling

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95