Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Compact Models for Double Gate and Surrounding Gate MOSFETs

Authors: H. Abebe, E. Cumberbatch, H. Morris and S. Uno

Affilation: San Jose State University, United States

Pages: 824 - 827

Keywords: analytic solutions, compact model, double gate MOSFETs, surrounding gate MOSFETs, quantum corrections

Abstract:
The models presented by Lu and Taur, [1], for lightly doped double gate and surrounding gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present explicit, analytic solutions of these equations based on the Lambert function, [2]. These solutions are shown to be accurate compare with exact numerical solutions. Quantum effect corrections to the IDS – VDS formulae are also included, and these are based on analytic solutions obtained for the density gradient model, [3].<br>&nbsp;<br>[1] H. Lu and Y. Taur, “Physics-Based, Non-Charge-Sheet Compact Modeling of Double Gate MOSFETs,” Nanotech, Anaheim, Ca., 2005.<br>[2] A. Ortiz-Conde, F. J. Garcia Sanchez, M.Guzman, “Exact Analytical Solution of Channel Surface Potential as an Explicit Function of Gate Voltage in Undoped-body MOSFETs Using the Lambert W function and a Threshold Voltage Definition Therefrom,” Solid-State Electronics 47 (2003) 2067-2074.<br>[3] S. Uno, H. Abebe, and E.Cumberbatch, “Analytical Solutions to Quantum Drift-Diffusion Equations for Quantum Mechanical Modeling of MOS Structures,” Solid State Devices and Materials, Kobe, Japan, 2005.

Compact Models for Double Gate and Surrounding Gate MOSFETs

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95