Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

Compact Models for Double Gate and Surrounding Gate MOSFETs

Authors:H. Abebe, E. Cumberbatch, H. Morris and S. Uno
Affilation:San Jose State University, US
Pages:824 - 827
Keywords:analytic solutions, compact model, double gate MOSFETs, surrounding gate MOSFETs, quantum corrections
Abstract:The models presented by Lu and Taur, [1], for lightly doped double gate and surrounding gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present explicit, analytic solutions of these equations based on the Lambert function, [2]. These solutions are shown to be accurate compare with exact numerical solutions. Quantum effect corrections to the IDS – VDS formulae are also included, and these are based on analytic solutions obtained for the density gradient model, [3].
[1] H. Lu and Y. Taur, “Physics-Based, Non-Charge-Sheet Compact Modeling of Double Gate MOSFETs,” Nanotech, Anaheim, Ca., 2005.
[2] A. Ortiz-Conde, F. J. Garcia Sanchez, M.Guzman, “Exact Analytical Solution of Channel Surface Potential as an Explicit Function of Gate Voltage in Undoped-body MOSFETs Using the Lambert W function and a Threshold Voltage Definition Therefrom,” Solid-State Electronics 47 (2003) 2067-2074.
[3] S. Uno, H. Abebe, and E.Cumberbatch, “Analytical Solutions to Quantum Drift-Diffusion Equations for Quantum Mechanical Modeling of MOS Structures,” Solid State Devices and Materials, Kobe, Japan, 2005.
Compact Models for Double Gate and Surrounding Gate MOSFETsView PDF of paper
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