Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Explicit Threshold Voltage Based Compact Model of Independent Double Gate MOSFET

Authors: M. Reyboz, T. Poiroux, O. Rozeau, P. Martin and J. Jomaah

Affilation: CEA, France

Pages: 796 - 799

Keywords: independent double gate MOSFET, threshold compact model, verilogA, circuit design

Abstract:
This paper describes an explicit compact model of Independent Double Gate (IDG) MOSFET with undoped channel. The validity of this model is demonstrated by comparisons with Atlas simulations. The model was implemented in VerilogA in order to test it and to design circuits. Circuit results of a mixer and an inverter are presented.

Explicit Threshold Voltage Based Compact Model of Independent Double Gate MOSFET

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95