Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Explicit Threshold Voltage Based Compact Model of Independent Double Gate MOSFET

Authors:M. Reyboz, T. Poiroux, O. Rozeau, P. Martin and J. Jomaah
Affilation:CEA, FR
Pages:796 - 799
Keywords:independent double gate MOSFET, threshold compact model, verilogA, circuit design
Abstract:This paper describes an explicit compact model of Independent Double Gate (IDG) MOSFET with undoped channel. The validity of this model is demonstrated by comparisons with Atlas simulations. The model was implemented in VerilogA in order to test it and to design circuits. Circuit results of a mixer and an inverter are presented.
Explicit Threshold Voltage Based Compact Model of Independent Double Gate MOSFETView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map