Compact Modeling of Doped Symmetric DG MOSFETs with Regional Approach

	Nanotech 2006 Vol. 3 Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 7: Compact Modeling
	Compact Modeling of Doped Symmetric DG MOSFETs with Regional Approach
Authors:	K. Chandrasekaran, Z.M. Zhu, X. Zhou, W. Shangguan, G.H. See, S.B. Chiah, S.C. Rustagi and N. Singh
Affilation:	Nanyang Technological University, SG
Pages:	792 - 795
Keywords:	compact modeling, Double gate, Regional aproach
Abstract:	A compact model for the explicit surface potential equation of doped symmetric double-gate MOSFET from Poisson equation with regional approach is presented. It’s scalable for all doping and channel thicknesses and has been proved to agree numerical results very well.
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ISBN:	0-9767985-8-1
Pages:	913
Hardcopy:	$119.95

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