Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Compact Modeling of Doped Symmetric DG MOSFETs with Regional Approach

Authors: K. Chandrasekaran, Z.M. Zhu, X. Zhou, W. Shangguan, G.H. See, S.B. Chiah, S.C. Rustagi and N. Singh

Affilation: Nanyang Technological University, Singapore

Pages: 792 - 795

Keywords: compact modeling, Double gate, Regional aproach

Abstract:
A compact model for the explicit surface potential equation of doped symmetric double-gate MOSFET from Poisson equation with regional approach is presented. It’s scalable for all doping and channel thicknesses and has been proved to agree numerical results very well.


ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95

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