Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Compact Modeling of Doped Symmetric DG MOSFETs with Regional Approach

Authors:K. Chandrasekaran, Z.M. Zhu, X. Zhou, W. Shangguan, G.H. See, S.B. Chiah, S.C. Rustagi and N. Singh
Affilation:Nanyang Technological University, SG
Pages:792 - 795
Keywords:compact modeling, Double gate, Regional aproach
Abstract:A compact model for the explicit surface potential equation of doped symmetric double-gate MOSFET from Poisson equation with regional approach is presented. It’s scalable for all doping and channel thicknesses and has been proved to agree numerical results very well.
Compact Modeling of Doped Symmetric DG MOSFETs with Regional ApproachView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
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