Authors: J. He, X. Zhang, M. Chan and Y. Wang
Affilation: Peking university, China
Pages: 788 - 791
Keywords: non-classical MOSFETs, non-charge-sheet, device physics, compact modeling, surrounding-gate MOSFET, carrier-based model
A carrier-based analytic DCIV model for the undoped cylindrical surrounding-gate MOSFETs is presented in this paper. It is based on an exact solution of the Poisson equation and a Pao-Sah current formulation in terms of the carrier concentration. From this model, the different dependences of the surface potential, centric potential, inversion charge and the current on the silicon body thickness and the gate oxide are elucidated analytically and then the predicted IV characteristics are compared with the 3-D numerical simulations. The analytical results of the model presented also show in a good agreement with the 3-D simulation, demonstrating the model is valid for all operation regions and traces the transition between them without any need for the fitting parameter.