Authors: Y. Mahotin, S. Tirumala, X-W Lin and D. Pramanik
Affilation: Synopsys, Inc., United States
Pages: 776 - 779
Keywords: TCAD, HSPICE, process-dependant model card, extraction
This paper describes the methodology for global extraction of HSPICE compact model parameters as explicit polynomial functions of process parameter variations (halo dosage, gate oxidation temperature etc). Electrical data required for extraction is obtained from TCAD process and device simulations. Validation of the extracted models is performed for a 90nm technology node by verifying the predictability of the HSPICE model parameters against the TCAD simulations for a given set of process conditions. Model parameters, thus obtained, are used to understand the behavior of typical design circuit elements using HSPICE.