Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Two-Tone Distortion Modeling for SiGe HBTs Using the High-Current Model

Authors:R.R. Malladi, V. Borich, S.L. Sweeney, J. Rascoe, K.M. Newton, S. Venkatadri, J. Yang and S. Chen
Affilation:IBM Systems and Technology, US
Pages:765 - 767
Keywords:SiGe, HBT, Hicum, Distortion
Abstract:This paper examines certain aspects of the base resistance model of HiCUM (High Current Model) to address convergence problems seen during 2-tone distortion simulations of SiGe HBTs. Here, we propose some changes to the model implementation and incorporate them in ADS simulator. This resulted in excellent agreement between the inter-modulation distortion measurements and the model.
Two-Tone Distortion Modeling for SiGe HBTs Using the High-Current ModelView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map