Two-Tone Distortion Modeling for SiGe HBTs Using the High-Current Model

	Nanotech 2006 Vol. 3 Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 7: Compact Modeling
	Two-Tone Distortion Modeling for SiGe HBTs Using the High-Current Model
Authors:	R.R. Malladi, V. Borich, S.L. Sweeney, J. Rascoe, K.M. Newton, S. Venkatadri, J. Yang and S. Chen
Affilation:	IBM Systems and Technology, US
Pages:	765 - 767
Keywords:	SiGe, HBT, Hicum, Distortion
Abstract:	This paper examines certain aspects of the base resistance model of HiCUM (High Current Model) to address convergence problems seen during 2-tone distortion simulations of SiGe HBTs. Here, we propose some changes to the model implementation and incorporate them in ADS simulator. This resulted in excellent agreement between the inter-modulation distortion measurements and the model.
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ISBN:	0-9767985-8-1
Pages:	913
Hardcopy:	$119.95

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