Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Two-Tone Distortion Modeling for SiGe HBTs Using the High-Current Model

Authors: R.R. Malladi, V. Borich, S.L. Sweeney, J. Rascoe, K.M. Newton, S. Venkatadri, J. Yang and S. Chen

Affilation: IBM Systems and Technology, United States

Pages: 765 - 767

Keywords: SiGe, HBT, Hicum, Distortion

Abstract:
This paper examines certain aspects of the base resistance model of HiCUM (High Current Model) to address convergence problems seen during 2-tone distortion simulations of SiGe HBTs. Here, we propose some changes to the model implementation and incorporate them in ADS simulator. This resulted in excellent agreement between the inter-modulation distortion measurements and the model.

Two-Tone Distortion Modeling for SiGe HBTs Using the High-Current Model

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95