Comprehensive Characterization and Analysis of RTS, 1/f, RF Noise and Power Performances of Schottky-Diode in Standard CMOS

	Nanotech 2006 Vol. 3 Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 7: Compact Modeling
	Comprehensive Characterization and Analysis of RTS, 1/f, RF Noise and Power Performances of Schottky-Diode in Standard CMOS
Authors:	Y.Z. Xiong, G.Q. Lo, J.L. Shi, M.B. Yu, W.Y. Loh and D.L. Kwong
Affilation:	Institute of Microelectronics, Singapore, SG
Pages:	761 - 764
Keywords:	modeling, Schottky diode, 1/f noise, RF noise, RF power, characterization
Abstract:	This study presents comprehensive characterization of Schottky-diode in standard CMOS on its DC, low-frequency and RF noise performance. Random-telegraph-signal (RTS) and 1/f noise have been characterized, along with RF noise, power performances analysis. Results showed that Schottky diodes in standard CMOS are excellent choices for low-noise and high-speed RFIC applications.
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ISBN:	0-9767985-8-1
Pages:	913
Hardcopy:	$119.95

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