On the Compact Modelling of Induced Gate Noise in the MOS Transistor
Authors:
A.S. Roy and C.C. Enz
Affilation:
Swiss Federal Institute of Technology, Lausanne (EPFL), CH
Pages:
757 - 760
Keywords:
MOSFET, mobility model, noise
Abstract:
This work presents a analytical model to calculate gate related noise parameters for any arbitrary velocity field relationship and discusses some finer point of diffusivity modeling and impact of those effect on gate related noise parameters.
