Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

On the Compact Modelling of Induced Gate Noise in the MOS Transistor

Authors:A.S. Roy and C.C. Enz
Affilation:Swiss Federal Institute of Technology, Lausanne (EPFL), CH
Pages:757 - 760
Keywords:MOSFET, mobility model, noise
Abstract:This work presents a analytical model to calculate gate related noise parameters for any arbitrary velocity field relationship and discusses some finer point of diffusivity modeling and impact of those effect on gate related noise parameters.
On the Compact Modelling of Induced Gate Noise in the MOS TransistorView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
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