Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

On the Compact Modelling of Induced Gate Noise in the MOS Transistor

Authors: A.S. Roy and C.C. Enz

Affilation: Swiss Federal Institute of Technology, Lausanne (EPFL), Switzerland

Pages: 757 - 760

Keywords: MOSFET, mobility model, noise

Abstract:
This work presents a analytical model to calculate gate related noise parameters for any arbitrary velocity field relationship and discusses some finer point of diffusivity modeling and impact of those effect on gate related noise parameters.

On the Compact Modelling of Induced Gate Noise in the MOS Transistor

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95