Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Compact Modeling of Nonlinearities in Submicron MOSFETs

Authors: P.D. da Silva, F.R. de Sousa, C.G. Montoro and M.C. Schneider

Affilation: Federal University of Santa Catarina, Brazil

Pages: 753 - 756

Keywords: MOSFET, nonlinearity, sweet spot, IIP3

Abstract:
Low power operation in RF CMOS circuits requiring low-distortion levels is often difficult to achieve due to the exponential relationship between drain current (IDS) and gate-to-source voltage (VGS) in subthreshold region.<br>&nbsp;<br>Our contribution in this work is to offer very compact but still accurate expressions for predicting the third-order nonlinearities as function of the transistor operating point


ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95

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