Compact Modeling of Nonlinearities in Submicron MOSFETs

	Nanotech 2006 Vol. 3 Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 7: Compact Modeling
	Compact Modeling of Nonlinearities in Submicron MOSFETs
Authors:	P.D. da Silva, F.R. de Sousa, C.G. Montoro and M.C. Schneider
Affilation:	Federal University of Santa Catarina, BR
Pages:	753 - 756
Keywords:	MOSFET, nonlinearity, sweet spot, IIP3
Abstract:	Low power operation in RF CMOS circuits requiring low-distortion levels is often difficult to achieve due to the exponential relationship between drain current (IDS) and gate-to-source voltage (VGS) in subthreshold region. Our contribution in this work is to offer very compact but still accurate expressions for predicting the third-order nonlinearities as function of the transistor operating point
	View PDF of paper
ISBN:	0-9767985-8-1
Pages:	913
Hardcopy:	$119.95

Order:	Mail/Fax Form
Special:	3 CD Set — 15% off with Free Shipping
Up