Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

Compact Modeling of Nonlinearities in Submicron MOSFETs

Authors:P.D. da Silva, F.R. de Sousa, C.G. Montoro and M.C. Schneider
Affilation:Federal University of Santa Catarina, BR
Pages:753 - 756
Keywords:MOSFET, nonlinearity, sweet spot, IIP3
Abstract:Low power operation in RF CMOS circuits requiring low-distortion levels is often difficult to achieve due to the exponential relationship between drain current (IDS) and gate-to-source voltage (VGS) in subthreshold region.
Our contribution in this work is to offer very compact but still accurate expressions for predicting the third-order nonlinearities as function of the transistor operating point
Compact Modeling of Nonlinearities in Submicron MOSFETsView PDF of paper
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