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 | Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling |
| | Compact Modeling of Nonlinearities in Submicron MOSFETs | | Authors: | P.D. da Silva, F.R. de Sousa, C.G. Montoro and M.C. Schneider | | Affilation: | Federal University of Santa Catarina, BR | | Pages: | 753 - 756 | | Keywords: | MOSFET, nonlinearity, sweet spot, IIP3 | | Abstract: | Low power operation in RF CMOS circuits requiring low-distortion levels is often difficult to achieve due to the exponential relationship between drain current (IDS) and gate-to-source voltage (VGS) in subthreshold region.
Our contribution in this work is to offer very compact but still accurate expressions for predicting the third-order nonlinearities as function of the transistor operating point | | ISBN: | 0-9767985-8-1 |
| Pages: | 913 |
| Hardcopy: | $185.00 |
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