Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

Scalable MOSFET Short-channel Charge Model in All Regions

Authors:G.H. See, S.B. Chiah, X. Zhou, K. Chandrasekaran, W. Shangguan, Z. Zhu, G.H. Lim, S.M. Pandey, M. Cheng, S. Chu and L-C Hsia
Affilation:NTU, SG
Pages:749 - 752
Keywords:short channel effects, charge model, intrinsic charges, extrinsic capacitance, bulk-charge sharing, potential barrier lowering
Abstract:Short-channel effects (SCEs) for both intrinsic charges
and extrinsic capacitances need to be modeled when the
MOSFET channel is short. The intrinsic SCEs are modeled using bulk-charge sharing and quasi-two dimensional potential barrier loweirng; extrinsic overlap capacitances are derived based on unified reigonal surface potential for charges. Similar to the channel, bulk-charge sharing is also applied to the overlap LDD region. The model shows good scalability with different lengths and body biases at short channel due to physically derived intrinsic SC charges valid for all regions. Without these physically derived, bias and geometry scalable charge models, a nonscalable “core” model would have to employ empirical geometry and/or bias fitting, which will neither be accurate nor physical for short-channel small-signal ac and large signal transient analyses.
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