Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Effects of Scaling on Modeling of Analog RF MOS Devices

Authors:Y. Liu, S. Cao, T.Y. Oh, B. Wu, O. Tornblad and R.W. Dutton
Affilation:Stanford University, US
Pages:708 - 713
Keywords:TCAD, RF, noise, impedence field, nonlinear distortion
Abstract:This paper uses advanced TCAD tools—both IMF-based noise modeling and HB-based distortion modeling—to extract parameters of key importance in developing compact models. Additionally, the TCAD-based modeling provides insight into technology constraints that can potentially influence future MOS scaling for analog applications.
Effects of Scaling on Modeling of Analog RF MOS DevicesView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
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