Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Effects of Scaling on Modeling of Analog RF MOS Devices

Authors: Y. Liu, S. Cao, T.Y. Oh, B. Wu, O. Tornblad and R.W. Dutton

Affilation: Stanford University, United States

Pages: 708 - 713

Keywords: TCAD, RF, noise, impedence field, nonlinear distortion

Abstract:
This paper uses advanced TCAD tools—both IMF-based noise modeling and HB-based distortion modeling—to extract parameters of key importance in developing compact models. Additionally, the TCAD-based modeling provides insight into technology constraints that can potentially influence future MOS scaling for analog applications.

Effects of Scaling on Modeling of Analog RF MOS Devices

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95