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 | Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling |
| | Effects of Scaling on Modeling of Analog RF MOS Devices | | Authors: | Y. Liu, S. Cao, T.Y. Oh, B. Wu, O. Tornblad and R.W. Dutton | | Affilation: | Stanford University, US | | Pages: | 708 - 713 | | Keywords: | TCAD, RF, noise, impedence field, nonlinear distortion | | Abstract: | This paper uses advanced TCAD tools—both IMF-based noise modeling and HB-based distortion modeling—to extract parameters of key importance in developing compact models. Additionally, the TCAD-based modeling provides insight into technology constraints that can potentially influence future MOS scaling for analog applications. | | ISBN: | 0-9767985-8-1 |
| Pages: | 913 |
| Hardcopy: | $185.00 |
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