Authors: Y. Liu, S. Cao, T.Y. Oh, B. Wu, O. Tornblad and R.W. Dutton
Affilation: Stanford University, United States
Pages: 708 - 713
Keywords: TCAD, RF, noise, impedence field, nonlinear distortion
This paper uses advanced TCAD tools—both IMF-based noise modeling and HB-based distortion modeling—to extract parameters of key importance in developing compact models. Additionally, the TCAD-based modeling provides insight into technology constraints that can potentially influence future MOS scaling for analog applications.