Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

Effects of Scaling on Modeling of Analog RF MOS Devices

Authors:Y. Liu, S. Cao, T.Y. Oh, B. Wu, O. Tornblad and R.W. Dutton
Affilation:Stanford University, US
Pages:708 - 713
Keywords:TCAD, RF, noise, impedence field, nonlinear distortion
Abstract:This paper uses advanced TCAD tools—both IMF-based noise modeling and HB-based distortion modeling—to extract parameters of key importance in developing compact models. Additionally, the TCAD-based modeling provides insight into technology constraints that can potentially influence future MOS scaling for analog applications.
Effects of Scaling on Modeling of Analog RF MOS DevicesView PDF of paper
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