Authors: J.S. Watts, R. Pino and H. Trombley
Affilation: IBM, United States
Pages: 703 - 707
Keywords: MOSFET, RDF, compact models
This paper discribes methodogy to correctly model small area MOSFETs including paremeter extraction and centering using multiple parallel devices for accurate measurments. The method includes adjusting the measured data to recover true single finger behavior, adjusting device typical values derived from ensemble devices and modeling single and multi-finger devices correctly.