Authors: B. Iñíguez, A. Lázaro, O. Moldovan, A. Cerdeira and T.A. Fjeldly
Affilation: Universitat rovira i Virgili (URV), Spain
Pages: 680 - 685
Keywords: unified charge control model, small-signal modeling, high-frequency modeling
In this paper we present a complete compact model for doped DG MOSFETs which includes explicit expressions of the channel current and of all small- and large-signal parameters. <br>The model is based on a unified charge-control model obtained from Poisson’s equation. Compact expressions of the current and terminal charges, in terms of the inversion charge sheet densities at the source and drain ends, are derived.The modeled channel current and capacitances has been proved to be in good agreement with numerical 2D simulations. <br>The small-signal model has been extended to the RF range using channel segmentation, and adding the extrinsic elements. A high-frequency noise model has also been developed.