Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

Recent Upgrades and Applications of UFDG

Authors:J.G. Fossum, V.P. Trivedi, M.M. Chowdhury, S.H. Kim and W. Zhang
Affilation:University of Florida, US
Pages:674 - 679
Keywords:nonclassical MOSFETs, double-gate MOSFETs, ultra-thin body, ballistic transport
Abstract:Recent upgrades of UFDG, a process/physics-based compact model for nonclassical MOSFETs having ultra-thin Si bodies (UTB), are overviewed, and several recent applications of the model are presented, exemplifying the potential benefits of FinFETs in nanoscale CMOS circuits in which classical MOSFETs will not adequately perform.
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