Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

BSIM4 and BSIM Multi-Gate Progress

Authors:M.V. Dunga, C.–H. Lin, X. Xi, S. Chen, D.D. Lu, A.M. Niknejad and C. Hu
Affilation:UC Berkeley, US
Pages:658 - 661
Keywords:compact modeling, BSIM
Abstract:Compact models form an integral part of any circuit design environment, ranging from analog and digital design to mixed-signal design worlds. The models need to be developed and improved in parallel with technology advancements to enable an efficient and quick adoption of the new technologies. Towards this end, BSIM models have continuously addressed the modeling challenges posed by N+1 and N+2 technology nodes. In this paper, the progress made towards enhancing the bulk MOSFET model BSIM4 and the Multi-Gate transistor model BSIM-MG are presented.
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