Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact Modeling

Authors:X. Zhou, K. Chandrasekaran, S.B. Chiah, W. Shangguan, Z. Zhu, G.H. See, S. Mani Pandey, G.H. Lim, S. Rustagi, M. Cheng, S. Chu and L-C Hsia
Affilation:Nanyang Technological University, SG
Pages:652 - 657
Keywords:compact modeling, surface potential, SOI, ultra-thin body, double gate, MOSFET
Abstract:In this paper, we extend our unified regional approach to bulk-MOS charge modeling with non-pinned surface potential for various device structures such as PD/FD/UTB SOI and s-DG MOSFETs, including strained-Si channel. The regional solutions make it easy to handle different device structures with explicit asymptotically physical solutions, and the unified solution combines the best features in fs/Qi/Vt-based approaches without the need to solve exactly at flat-band. We show that it is viable to obtain a unified solution scalable with layer thickness and doping, in all regions (accumulation, depletion, weak/volume/strong inversions). In particular, the effect of doping (even unintentional) is studied with the regional approach. The ultimate goal is to have a generic scalable model with selectable accuracy and seamless transition across device types and operations.
Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact ModelingView PDF of paper
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