Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Advanced Compact MOSFET Model HiSIM2 Based on Surface Potentials with a Minimum Number of Approximation

Authors:M. Miura-Mattausch, D. Navarro, N. Sadachika, G. Suzuki, Y. Takeda, M. Miyake, T. Warabino, K. Machida, T. Ezaki, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, S. Kumashiro, R. Inagaki and S. Miyamoto
Affilation:Hiroshima University, JP
Pages:638 - 643
Keywords:MOSFET, comapct model, surface potential, RF applications
Abstract:The compact model HiSIM2 supports RF-circuit applications with advanced MOSFETs and is a further development of HiSIM1 which has been released since 2001 for public usage. Important features, required for the real applications, are summarized. In particular, HiSIM2 models advanced MOSFET technologies by determining the surface potentials from the Poisson equation with a minimum number of approximations.
Advanced Compact MOSFET Model HiSIM2 Based on Surface Potentials with a Minimum Number of ApproximationView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
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