| |
 | Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling |
| | An Improved MOS Transistor Model with an Integrated Mobility Model | | Authors: | J.R. Hauser | | Affilation: | N.C. State University, US | | Pages: | 610 - 615 | | Keywords: | MOS FET model, mobility, IV characteristic | | Abstract: | A new and improved MOS I-V model will be presented using a more exact approach to include surface field dependent mobility effects. Mobility degradation effects are included in the basic I-V differential equation as opposed to adding in a more approximate manner to the integrated I-V equation. A comparison of the model will also be given to experimental data for both long and short channel MOS devices. A consistent set of model parameters can accurately describe the I-V characteristics of both long and short channel MOS devices. Methods of extending the model to include the subthreshold I-V region will also be presented. | | ISBN: | 0-9767985-8-1 |
| Pages: | 913 |
| Hardcopy: | $185.00 |
|
| Order: | Mail/Fax Form |
| Special: | 3 CD Set — 15% off with Free Shipping |
| Up | |
|
| Upcoming Events |
 |
 |
 |
 |
| nanoPRwire™ |
 |
| News Headlines |
 |
|
|
| |
| |
|
| | |
| |
|
|
