Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

An Improved MOS Transistor Model with an Integrated Mobility Model

Authors:J.R. Hauser
Affilation:N.C. State University, US
Pages:610 - 615
Keywords:MOS FET model, mobility, IV characteristic
Abstract:A new and improved MOS I-V model will be presented using a more exact approach to include surface field dependent mobility effects. Mobility degradation effects are included in the basic I-V differential equation as opposed to adding in a more approximate manner to the integrated I-V equation. A comparison of the model will also be given to experimental data for both long and short channel MOS devices. A consistent set of model parameters can accurately describe the I-V characteristics of both long and short channel MOS devices. Methods of extending the model to include the subthreshold I-V region will also be presented.
An Improved MOS Transistor Model with an Integrated Mobility ModelView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
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