An Improved MOS Transistor Model with an Integrated Mobility Model

	Nanotech 2006 Vol. 3 Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 7: Compact Modeling
	An Improved MOS Transistor Model with an Integrated Mobility Model
Authors:	J.R. Hauser
Affilation:	N.C. State University, US
Pages:	610 - 615
Keywords:	MOS FET model, mobility, IV characteristic
Abstract:	A new and improved MOS I-V model will be presented using a more exact approach to include surface field dependent mobility effects. Mobility degradation effects are included in the basic I-V differential equation as opposed to adding in a more approximate manner to the integrated I-V equation. A comparison of the model will also be given to experimental data for both long and short channel MOS devices. A consistent set of model parameters can accurately describe the I-V characteristics of both long and short channel MOS devices. Methods of extending the model to include the subthreshold I-V region will also be presented.
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ISBN:	0-9767985-8-1
Pages:	913
Hardcopy:	$119.95

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