Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

Theory and Modeling Techniques used in PSP Model

Authors:G. Gildenblat, X. Li, H. Wang, W. Wu, A. Jha, R. van Langevelde, A.J. Scholten, G.D.J. Smit and D.B.M. Klaassen
Affilation:Pennsylvania State University, US
Pages:604 - 609
Keywords:compact MOSFET model, PSP, surface potential
Abstract:This paper describes theoretical foundation and details of the new compact modeling techniques used in the advanced surface-potential-based compact MOSFET model PSP, jointly developed by the Pennsylvania State University and Philips Research. Specific topics include surface potential equation, generalized symmetric linearization method and non-uniformity of the vertical impurity profile.
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