Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 6: MEMS Device Modeling

Strong and Weak Inversion Mode of MOS in the Design of Direction Sensitivity Matrix

Authors:M. Husak, A. Boura and J. Jakovenko
Affilation:Czech Technical University in Prague, CZ
Pages:574 - 577
Keywords:design, simulation, direction, measurement, one chip
Abstract:In the article there is presented a new arrangement of a temperature sensor system for air velocity and direction measurement. The system utilizes temperature dependence of the current through the channel of MOS structure. The geometric arrangement of temperature sensors allows measurement of temperature gradient. Temperature gradient allows to compute direction of air flow over the chip. Optimal operating modes of weak and strong inversion of MOS structure operation have been selected for the design of integrated temperature matrix. The matrix has been used for the design of a probe for measurement. Various arrangements of MOS sensor structures have been designed. CoventorWare and CADENCE software tools have been used for simulation and modeling of sensor properties.
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