Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations

	Nanotech 2006 Vol. 3 Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 5: Numerical and Computational Methods
	Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations
Authors:	H. Abebe, E. Cumberbatch, H. Morris and V. Tyree
Affilation:	USC/ISI, US
Pages:	519 - 522
Keywords:	charge centroid, device modeling, MOSFET, quantum effect, sub-Band energy
Abstract:	Quantum effects on MOS structures investigation.
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ISBN:	0-9767985-8-1
Pages:	913
Hardcopy:	$119.95

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