Nano Science and Technology Institute
Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 5: Numerical and Computational Methods
 

Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations

Authors:H. Abebe, E. Cumberbatch, H. Morris and V. Tyree
Affilation:USC/ISI, US
Pages:519 - 522
Keywords:charge centroid, device modeling, MOSFET, quantum effect, sub-Band energy
Abstract:Quantum effects on MOS structures investigation.
Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB ApproximationsView PDF of paper
ISBN:0-9767985-8-1
Pages:913
Hardcopy:$119.95
 
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