Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Numerical and Computational Methods Chapter 5

Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations

Authors: H. Abebe, E. Cumberbatch, H. Morris and V. Tyree

Affilation: USC/ISI, United States

Pages: 519 - 522

Keywords: charge centroid, device modeling, MOSFET, quantum effect, sub-Band energy

Abstract:
Quantum effects on MOS structures investigation.

Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95